elektronische bauelemente SMS3415 -4a , -20v , r ds(on) 50 m ? p-channel enhancement mode power mosfet 31-oct-2013 rev.a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description the SMS3415 provide the designer with the b est combination of fast switching, ruggedized device de sign, low on-resistance and cost-effectiveness. the sot-23 pa ckage is universally preferred for all commercial-industr ial surface mount applications and suited for low voltage appli cations such as dc/dc converters. features lower gate charge simple drive requirement fast switching characteristic marking package information package mpq leader size sot-23 3k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds -20 v gate-source voltage v gs 8 v continuous drain current (t 10s) i d -4 a maximum power dissipation (t 10s) p d 0.35 w thermal resistance junction-ambient r ja 357 c / w operating junction & storage temperature t j , t stg 150, -55~150 c sot-23 r15 top view a l c b d g h j f k e 1 2 3 1 2 3 millimeter millimeter ref. min. max. ref. min. max. a 2.80 3.04 g 0.09 0.18 b 2.10 2.55 h 0.45 0.60 c 1.20 1.40 j 0.08 0.177 d 0.89 1.15 k 0.6 ref. e 1.78 2.04 l 0.89 1.02 f 0.30 0.50 top view
elektronische bauelemente SMS3415 -4a , -20v , r ds(on) 50 m ? p-channel enhancement mode power mosfet 31-oct-2013 rev.a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss -20 - - v v gs =0, i d = -250 a gate-threshold voltage v gs(th) -0.3 - -1 v v ds =v gs , i d = -250 a - - 10 v gs = 8v, v ds =0 gate-source leakage current i gss - - 1 a v gs = 4.5v, v ds =0 drain-source leakage current i dss - - -1 a v ds = -16v, v gs =0 forward transconductance 2 g fs 8 - - s v ds = -5v, i d = -4a diode forward voltage 2 v sd - - -1 v i s = -1a, v gs =0 - - 50 v ds = -4.5v, i d =-4a - - 60 v gs = -2.5v, i d = -4a static drain-source on-resistance 1 r ds(on) - - 73 m v gs = -1.8v, i d = -2a switching parameters total gate charge q g - 17.2 - gate-source charge q gs - 1.3 - gate-drain change q gd - 4.5 - nc i d = -4a v ds = -10v v gs = -4.5v turn-on delay time t d(on) - 9.5 - rise time t r - 17 - turn-off delay time t d(off) - 94 - fall time t f - 35 - ns v ds = -10v v gs = -4.5v r gen =3 r l =2.5 dynamic parameters 3 input capacitance c iss - 1450 - output capacitance c oss - 205 - reverse transfer capacitance c rss - 160 - pf v gs =0 v ds = -10v f =1.0mhz gate resistance r g - 6.5 - v gs = v ds =0, f =1.0mhz note: 1. repetitive rating, pulse width limited by junct ion temperature. 2. pulse test : pulse width Q 300s, duty cycle Q 2%. 3. these parameters have no way to verify.
elektronische bauelemente SMS3415 -4a , -20v , r ds(on) 50 m ? p-channel enhancement mode power mosfet 31-oct-2013 rev.a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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